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AO4912L 参数 Datasheet PDF下载

AO4912L图片预览
型号: AO4912L
PDF下载: 下载PDF文件 查看货源
内容描述: 非对称双N沟道增强型场效应晶体管 [Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 8 页 / 151 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
=2.5V
3.5V
4.5V
3V
I
D
(A)
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
V
DS
=5V
30
Normalized On-Resistance
28
R
DS(ON)
(m
)
26
24
22
20
18
16
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
I
D
=7A
V
GS
=4.5V
V
GS
=10V
70
60
R
DS(ON)
(m
)
50
40
30
20
125°C
25°C
I
D
=7A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.