AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
4V
10V
4.5V
3.5V
I
D
(A)
30
25
20
15
10
5
0
2
3
4
5
1
1.5
2
2.5
3
3.5
4
25°C
125°C
V
DS
=5V
V
GS
=3V
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
(Volts)
Figure 2: Transfer Characteristics
1040
26
Normalized On-Resistance
1.7
1.6
1.5
1.4
I
D
=8.5A
180
110
0.7
22
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
V
GS
=4.5V
V
GS
=10V
18
R
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
1.3
GEN
=3Ω
V
GS
=10V
1.2
1.1
1
0.9
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
14
10
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
R
DS(ON)
(m
Ω
)
40
30
20
10
2
4
25°C
6
8
10
125°C
I
D
=8.5A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
FET+SCHOTTKY
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
25°C
125°C
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.