AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
25
20
15
10
5
4V
10V
25
20
15
10
5
VDS=5V
3.5V
4.5V
125°C
VGS=3V
25°C
0
0
1
1.5
2
2.5
VGS (Volts)
3
3.5
4
0
1
2
3
4
5
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
1040
180
110
0.7
26
22
18
14
10
1.7
1.6
1.5
1.4
1.3
ID=8.5A
VGS=4.5V
VGS=10V
VGS=4.5V
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
1.2
VGS=10V
1.1
1
0
5
10
15
20
25
30
0.9
I
D (A)
0
50
100
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
150
200
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
ID=8.5A
25°C
FET+SCHOTTKY
125°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.