AO4912
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
VR=30V
30
V
0.007 0.05
Zero Gate Voltage Drain Current.
by Schottky leakage)
(Set
IDSS
VR=30V, TJ=125°C
VR=30V, TJ=150°C
mA
3.2
12
10
20
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
3
VGS=4.5V, VDS=5V
30
A
V
GS=10V, ID=8.5A
13.8
20
17
24
25
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
DS=5V, ID=8.5A
19.7
23
gFS
VSD
IS
Forward Transconductance
V
S
V
A
Diode+Schottky Forward Voltage
IS=1A
0.45
0.5
3.5
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
971 1165 pF
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
Gate resistance
190
110
0.7
pF
pF
Ω
0.85
23
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
19.2
nC
nC
nC
nC
ns
Qg
Total Gate Charge
9.36 11.2
VGS=10V, VDS=15V, ID=8.5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
2.6
4.2
Gate Drain Charge
Turn-On DelayTime
5.2
4.4
7.5
6.5
25
5
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
ns
tD(off)
tf
Turn-Off DelayTime
17.3
3.3
ns
Turn-Off Fall Time
ns
trr
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
ns
19.3
9.4
23
11
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a
single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 4 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
