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AO4912 参数 Datasheet PDF下载

AO4912图片预览
型号: AO4912
PDF下载: 下载PDF文件 查看货源
内容描述: 非对称双N沟道增强型场效应晶体管 [Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 8 页 / 151 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4912的Datasheet PDF文件第1页浏览型号AO4912的Datasheet PDF文件第2页浏览型号AO4912的Datasheet PDF文件第4页浏览型号AO4912的Datasheet PDF文件第5页浏览型号AO4912的Datasheet PDF文件第6页浏览型号AO4912的Datasheet PDF文件第7页浏览型号AO4912的Datasheet PDF文件第8页  
AO4912  
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min Typ Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=24V, VGS=0V  
0.003  
1.5  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS= ±12V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
VGS=10V, ID=7.0A  
100  
2
nA  
V
VGS(th)  
ID(ON)  
1
25  
A
20  
26  
38  
31  
mΩ  
mΩ  
RDS(ON)  
TJ=125°C  
Static Drain-Source On-Resistance  
31.6  
24.3  
22  
VGS=4.5V, ID=6.0A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
VDS=5V, ID=7A  
IS=1A  
S
V
A
0.78  
1
3
Maximum Body-Diode Continuous Current  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
590  
162  
40  
710  
pF  
pF  
pF  
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
0.45  
0.6  
7.3  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
6.04  
1.46  
2.56  
3.7  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
ns  
nC  
VGS=4.5V, VDS=15V, ID=7.0A  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
5.5  
5.5  
22  
4
Turn-On Rise Time  
VGS=10V, VDS=15V, RL=2.2,  
3.5  
RGEN=3Ω  
tD(off)  
tf  
Turn-Off DelayTime  
14.9  
2.5  
Turn-Off Fall Time  
trr  
IF=7A, dI/dt=100A/µs  
IF=7A, dI/dt=100A/µs  
Body Diode Reverse Recovery time  
Body Diode Reverse Recovery charge  
21.2  
14.2  
26  
21  
Qrr  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.  
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal  
resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The  
SOA curve provides a single pulse rating.  
Rev 4 : Aug 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.