AO4842
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
V
DS
=15V
V
DS
=15V
I
D
=7.7A
I
D
=7.5A
Capacitance (pF)
600
500
400
300
200
100
0
0
C
C
rss rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
oss
C
iss
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
50
40
Power (W)
100µs
30
20
10
0
0.001
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
T
J(Max)
=150°C
T
A
=25°C
V
GS
=10V, V
DS
=15V, I
D
=7.4A
1ms
10ms
10µs
1.0
0.1
T
J(Max)
=150°C
T
A
=25°C
V
GS
=10V, V
DS
=15V, R
L
=2.0Ω, R
GEN
=3Ω
0.1s
DC
10s
0.0
0.01
0.1
1
I
F
=7.4A, dI/dt=100A/µs
10
100
V
DS
(Volts)
I
F
=7.4A, dI/dt=100A/µs
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
P
D
T
on
T
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
