AO4842
30V Dual N-Channel MOSFET
General Description
The AO4842 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters.
Product Summary
V
DS
(V) = 30V
I
D
= 7.7A
(V
GS
= 10V)
R
DS(ON)
< 21mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
Pin1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
30
±20
7.7
6.5
64
2
1.44
-55 to 150
Units
V
V
A
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
50
82
41
Max
62.5
110
50
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com