AO4842
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
6V
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
40
35
R
DS(ON)
(mΩ)
Ω
30
25
20
15
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
V
GS
=4.5V
V
GS
=4.5V
Normalized On-Resistance
4.5V
I
D
(A)
9
125°C
6
V
GS
=3.5V
3
125°C
25°C
25°
5V
6V
12
15
V
DS
=5V
V
DS
=5V
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
V
GS
=10V
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=4.5V
V
GS
=10V
60
I
D
=7.5A
50
R
DS(ON)
(mΩ)
Ω
40
I
S
(A)
125°C
I
D
=7.7A
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
125°
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
