AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
VDS=24V
1.0E-03
I
R
(A)
V
SD
(V)
VDS=12V
1.0E-04
0.8
0.7
0.6
0.5
0.4
0.3
1.0E-05
0.2
0.1
1.0E-06
100
150
200
Temperature (°C)
Figure 12: Diode
PARAMETERS
Reverse Leakage Current vs.
Junction Temperature
8
di/dt=800A/us
20
15
10
5
0
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
125ºC
20
15
10
5
0
0
125º
25ºC
Qrr
Irm
200
400
600
800
Is=20A
25ºC
Q
rr
(nC)
10
9
8
7
Irm (A)
5
4
3
2
1
0
1000
3
0
0
200
400
600
800
125ºC
S
0.5
0
1000
trr (ns)
6
15
12
9
6
25ºC
18
125ºC
25ºC
Is=20A
2.5
2
trr
1.5
1
S
Qrr
125ºC
Irm
25ºC
2
25ºC
Irm (A)
trr (ns)
4
125ºC
6
12
9
trr
6
25ºC
3
0
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
S
125ºC
0
0
0.5
25ºC
1
di/dt=800A/us
125ºC
2
1.5
15
0
50
0
0
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
2.5
50
I
S
=1A
10A
5A
20A
DYNAMIC
25
Q
rr
(nC)
3
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
