AO4710
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
TM
General Description
SRFET
The AO4710 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Standard Product AO4710 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
=12.7A (V
GS
= 10V)
R
DS(ON)
< 11.8mΩ (V
GS
= 10V)
R
DS(ON)
< 14.2mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Avalanche Current
C
C
B
Maximum
30
±12
12.7
10
60
22
73
3.1
2.0
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
V
GS
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
