AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
Capacitance (pF)
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=12.7A
3000
2500
C
iss
2000
1500
1000
C
rss
500
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
DYNAMIC PARAMETERS
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
1.0
10ms
DC
0.1
T
J(Max)
=150°C
T
A
=25°C
1ms
100µ
Power (W)
100
90
80
70
60
50
40
30
20
10
T
J(Max)
=150°C
T
A
=25°C
0.0
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
0.001
0.01
0.1
1
P
D
T
on
T
100
1000
0.01
Single Pulse
0.001
0.00001
0.0001
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
