AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=15V
I
D
=11.5A
Capacitance (pF)
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4
8
24
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
rss
C
iss
4
V
GS
(Volts)
3
2
1
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
100µs
1ms
10ms
0.1s
1s
1.0
T
J(Max)
=150°
C
C
T
A
=25°
0.1
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
10s
DC
Power (W)
10µs
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
T
J(Max)
=150°
C
T
A
=25°
C
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=65°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
D
T
on
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
