AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
4.5V
3V
2.5V
25
20
I
D
(A)
15
125°
C
10
10
V
GS
=1.5V
0
0
1
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
5
5
0
0
0.5
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3
25°
C
V
DS
=5V
30
30
I
D
(A)
20
2V
30
25
V
GS
=2.5V
R
DS(ON)
(m
Ω
)
20
V
GS
=4.5V
15
10
5
0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
5
10
V
GS
=10V
1.8
I
D
=10A
Normalized On-Resistance
1.6
V
GS
=4.5V
V
GS
=10V
1.4
V
GS
=2.5V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
40
I
D
=10A
V
GS
=0V
1.0E+00
125°
C
1.0E-01
30
R
DS(ON)
(m
Ω
)
20
25°
C
10
I
S
(A)
125°
C
1.0E-02
25°
C
1.0E-03
1.0E-04
1.0E-05
0
0.00
4.00
6.00
8.00
10.00
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
2.00
0.0
0.2
0.4
V
SD
0.6
1.0
(Volts)
0.8
Figure 6: Body-Diode Characteristics
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com