AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
AO4406 and
AO4406L are electrically identical.
-RoHS Compliant
-AO4406L is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 11.5A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 16.5mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
B
B
B
Maximum
30
±12
11.5
9.6
80
25
94
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
AV
E
AV
P
D
T
J
, T
STG
Repetitive Avalanche Energy L=0.3mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
23
48
12
Max
40
65
16
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
