APM9935K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
20
10
VGS = -4.5V
IDS = -6A
1.6
Tj=150oC
1.4
1.2
1.0
0.8
0.6
Tj=25oC
1
RON@Tj=25oC: 30mΩ
0.4
-50 -25
0.1
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
-VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
5
2500
2000
1500
1000
500
Frequency=1MHz
VDS= -10V
ID= -6A
4
3
2
1
0
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
4
8
12
16
20
QG - Gate Charge (nC)
-VDS - Drain-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw