APM9935K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
-20
±12
-6
Unit
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
A
A
VGS=-4.5V
-20
-2
IDM
*
300µs Pulsed Drain Current
IS*
TJ
Diode Continuous Forward Current
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
TA=25°C
2
W
PD*
Maximum Power Dissipation
TA=100°C
0.8
RθJA
*
Thermal Resistance-Junction to Ambient
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
62.5
°C/W
Note:
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9935
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
V
VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
-1
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-0.5
-0.7
-1
±100
45
V
VDS=VGS, IDS=-250µA
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-6A
VGS=-2.5V, IDS=-5A
ISD=-2A, VGS=0V
nA
30
38
a
RDS(ON) Drain-Source On-state Resistance
mΩ
65
a
VSD
Diode Forward Voltage
-0.7
-1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17
5.2
3.6
25
VDS=-10V, VGS=-4.5V,
IDS=-6A
nC
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
