APM2312
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.10
I
D
=5A
On-Resistance vs. Junction Temperature
2.25
V
GS
=4.5V
I
D
=5A
R
DS(ON)
-On-Resistance (Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
2
3
4
5
6
7
8
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.09
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
1000
V
DS
=10V
I
D
=1A
Capacitance
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
4
800
Capacitance (pF)
3
600
Ciss
2
400
Coss
Crss
1
200
0
0
2
4
6
8
10
12
0
0
4
8
12
16
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - July., 2003
4
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
