APM2312
Absolute Maximum Ratings (Cont.)
Symbol
P
D
Parameter
Maximum Power Dissipation
T
A
=25°C
T
A
=100°C
T
J
T
STG
R
θjA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
(T
A
= 25°C unless otherwise noted)
Rating
1.25
W
0.5
150
-55 to 150
100
°C
°C
°C/W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM2312
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250
µ
A
V
DS
=16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
8V , V
DS
=0V
V
GS
=4.5V , I
DS
=5A
V
GS
=2.5V , I
DS
=4.5A
V
GS
=1.8V , I
DS
=4A
I
SD
=1.7A , V
GS
=0V
V
DS
=10V , I
DS
= 1A
V
GS
=4.5V ,
16
1
0.5
0.7
35
45
60
0.7
10
1.9
1.8
17
33
70
80
45
1
±
100
45
55
70
1.3
12
V
µ
A
V
nA
m
Ω
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
nC
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
Ω
V
GS
=0V
V
DS
=15V
40
45
25
580
170
100
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.2 - July., 2003
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
