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AM40N20-180P 参数 Datasheet PDF下载

AM40N20-180P图片预览
型号: AM40N20-180P
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道200 -V (D -S )的MOSFET [N-Channel 200-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 5 页 / 331 K
品牌: ANALOGPOWER [ ANALOG POWER ]
 浏览型号AM40N20-180P的Datasheet PDF文件第2页浏览型号AM40N20-180P的Datasheet PDF文件第3页浏览型号AM40N20-180P的Datasheet PDF文件第4页浏览型号AM40N20-180P的Datasheet PDF文件第5页  
Analog Power  
AM40N20-180P  
N-Channel 200-V (D-S) MOSFET  
PRODUCT SUMMARY  
Key Features:  
rDS(on) (mΩ)  
VDS (V)  
200  
ID(A)  
34a  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
180 @ VGS = 10V  
340 @ VGS = 5.5V  
Typical Applications:  
White LED boost converters  
Automotive Systems  
Industrial DC/DC Conversion Circuits  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
200  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
Continuous Drain Current a  
TA=25°C  
TA=25°C  
34  
A
Pulsed Drain Current b  
IDM  
80  
Continuous Source Current (Diode Conduction) a  
IS  
20  
A
Power Dissipation a  
PD  
300  
W
°C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
Maximum Junction-to-Ambient a  
Maximum Junction-to-Case  
RθJA  
62.5  
°C/W  
RθJC  
1
Notes  
a.  
Surface Mounted on 1” x 1” FR4 Board.  
b.  
Pulse width limited by maximum junction temperature  
© Preliminary  
1
Publication Order Number:  
DS_AM40N20-180P_1A