Analog Power
AM40N20-180P
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mΩ)
VDS (V)
200
ID(A)
34a
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
180 @ VGS = 10V
340 @ VGS = 5.5V
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
ID
Limit
200
Units
Drain-Source Voltage
Gate-Source Voltage
V
±20
Continuous Drain Current a
TA=25°C
TA=25°C
34
A
Pulsed Drain Current b
IDM
80
Continuous Source Current (Diode Conduction) a
IS
20
A
Power Dissipation a
PD
300
W
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
RθJA
62.5
°C/W
RθJC
1
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM40N20-180P_1A