ATA01501
Table 4: Electrical Specifications (1)
(T = 25°C, V =+5.0V+10%, C +C 0.5 pF, Det. Cathode to I
=
STRAY
)
DIODE
IN
DD
A
PARAMETER
MIN
TYP
17
MAX
UNIT
¥
W
W
Transresistance (RL= ,Idc<500nA)
K
K
(1)
W
Transresistance (RL=50
Bandwidth -3dB (D1C)
Bandwidth -3dB (S2C)
Input Resistance (2)
Output Resistance
)
5.5
150
130
8
10
175
175
500
50
MHz
MHz
W
W
30
60
45
Supply Current
30
mA
Volts
Volts
mA
Input Offset Voltage
Output Offset Voltage
1.4
1.6
1.8
30
1.9
AGC Threshold (I ) (3)
15
-3
IN
(4)
Optical Overload
0
dBm
nA
Input Noise Current(5)
AGC Time Constant(6)
Offset Voltage Drift
14
20
m
16
sec
1
mV/ ºC
dBm
dBm
Volts
ºC
Optical Sensitivity -(D1C) (7)
Optical Sensitivity - (S2C) (7)
Operating Voltage Range
Operating Temperature Range
-38
-37
+ 5.0
+ 4.5
- 40
+ 6.0
85
Notes:
1. f = 50 MHz
2. Measured with IIN below
AGC Threshold. During AGC, input impedance will decrease proportionally to IIN
3. Defined as the IIN where Transresistance has decreased by 50%.
4. See note on Indirect Measurement of Optical Overload.
5. See note on Measurement of Input Referred Noise Current.
6. CAGC = 220 pF
7.
Parameter is guaranteed (not tested) by design and characterization data
@155Mb assuming detector responsivity of 0.9
PRELIMINARY DATA SHEET - Rev 1.6
4
08/2001
ANADIGICS [ ANADIGICS, INC ]
