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AS29LV800T-90TI 参数 Datasheet PDF下载

AS29LV800T-90TI图片预览
型号: AS29LV800T-90TI
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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March 2001  
AS29LV800  
®
Recommended operating conditions  
Parameter  
Comments  
Symbol  
Vcc  
Min  
+2.7  
+3.0  
0
Max  
Unit  
V
For full voltage range  
For regulated voltage range  
+3.6  
+3.6  
0
Supply voltage  
Vcc  
VSS  
VIH  
VIL  
V
V
1.9  
VCC + 0.3  
0.8  
V
Input voltage  
–0.5  
V
Absolute maximum ratings  
Parameter  
Symbol  
Min  
–0.5  
–0.5  
-0.5  
–55  
–65  
-
Max  
Unit  
Input voltage (Input or DQ pin)  
Input voltage (A9 pin, OE, RESET)  
Power supply voltage  
VIN  
VCC+ 0.5  
V
VIN  
+12.5  
+4.0  
+125  
+150  
150  
V
VCC  
TOPR  
TSTG  
IOUT  
V
Operating temperature  
°C  
°C  
mA  
Storage temperature (plastic)  
Short circuit output current  
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-  
imum rating conditions for extended periods may affect reliability.  
TSOP pin capacitance  
Symbol  
Parameter  
Test setup  
VIN = 0  
Typ  
6
Max  
7.5  
12  
Unit  
pF  
CIN  
Input capacitance  
Output capacitance  
Control pin capacitance  
COUT  
CIN2  
VOUT = 0  
VIN = 0  
8.5  
8
pF  
10  
pF  
SO pin capacitance  
Symbol  
Parameter  
Test setup  
VIN = 0  
Typ  
6
Max  
7.5  
12  
Unit  
pF  
CIN  
Input capacitance  
Output capacitance  
Control pin capacitance  
COUT  
CIN2  
VOUT = 0  
VIN = 0  
8.5  
8
pF  
10  
pF  
Data retention  
Parameter  
Temp.(°C)  
Min  
10  
Unit  
150°  
125°  
years  
years  
Minimum pattern data retention time  
20  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 23 of 25  
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