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AS29LV800T-90TI 参数 Datasheet PDF下载

AS29LV800T-90TI图片预览
型号: AS29LV800T-90TI
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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AS29LV800  
March 2001  
®
AC test conditions  
+3.0V  
1N3064  
or equivalent  
2.7K  
Device under test  
6.2KΩ  
CL*  
1N3064  
or equivalent  
VSS  
VSS  
VSS  
Test specifications  
Test Condition  
-70R,-80  
-90, -120  
1 TTL gate  
100  
Unit  
Output Load  
Output Load Capacitance CL (including jig capacitance)  
Input Rise and Fall Times  
30  
pF  
ns  
V
5
Input Pulse Levels  
0.0-3.0  
1.5  
Input timing measurement reference levels  
Output timing measurement reference levels  
V
1.5  
V
Erase and programming performance  
Limits  
Parameter  
Min  
Typical  
Max  
15  
Unit  
sec  
Sector erase and verify-1 time (excludes 00h programming  
prior to erase)  
-
1.0  
Byte  
-
-
-
-
10  
15  
300  
360  
27  
-
µs  
µs  
Programming time  
Word  
Chip programming time  
Erase/program cycles*  
7.2  
sec  
100,000  
cycles  
* Erase/program cycle test is not verified on each shipped unit.  
Latchup tolerance  
Parameter  
Min  
-1.0  
-0.5  
-100  
Max  
+12.0  
Unit  
V
Input voltage with respect to VSS on A9, OE, and RESET pin  
Input voltage with respect to VSS on all DQ, address, and control pins  
VCC+0.5  
+100  
V
Current  
mA  
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 22 of 25  
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