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A43P8316V-95I 参数 Datasheet PDF下载

A43P8316V-95I图片预览
型号: A43P8316V-95I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M X 16 Bit X 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 502 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L2616B  
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full Page  
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CLOCK  
CKE  
High  
CS  
RAS  
CAS  
RAa  
CAa  
CAb  
ADDR  
BA0  
BA1  
A10/AP  
RAa  
tRDL  
tBDL  
* Note 2  
WE  
DQM  
DQ  
DAa0 DAa1 DAa2 DAa3 DAa4  
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5  
Write  
(A-Bank)  
Write  
(A-Bank)  
Precharge  
(A-Bank)  
Row Active  
(A-Bank)  
Burst Stop  
: Don't care  
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.  
2. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.  
It is defined by AC parameter of tRDL(=2CLK).  
DQM at write interrupted by precharge command is needed to prevent invalid write.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.  
Input data after Row precharge cycle will be masked internally.  
3. Burst stop is valid at every burst length.  
(December, 2009, Version 1.3)  
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AMIC Technology, Corp.  
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