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A43L8316V-10 参数 Datasheet PDF下载

A43L8316V-10图片预览
型号: A43L8316V-10
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16位×2组同步DRAM [128K X 16 Bit X 2 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1382 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L8316  
Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Burst Length = Full Page)  
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10  
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12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
High  
CS  
RAS  
CAS  
RAa  
RAa  
CAa  
CAb  
ADDR  
BA  
* Note 1  
* Note 1  
A8/AP  
t
BDL  
t
RDL  
WE  
* Note 3  
DQM  
DQ  
* Note 2  
DAa0 DAa1 DAa2 DAa3 DAa4  
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5  
Write  
(A-Bank)  
Write  
(A-Bank)  
Precharge  
(A-Bank)  
Row Active  
(A-Bank)  
Burst Stop  
: Don't care  
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.  
2. Data-in at the cycle of burst stop command cannot be written into corresponding memory cell.  
It is defined by AC parameter of tBDL(=1CLK).  
3. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.  
It is defined by AC parameter of tRDL(1=CLK).  
DQM at write interrupted by precharge command is needed to ensure tRDL of 1CLK.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.  
Input data after Row precharge cycle will be masked internally.  
4. Burst stop is valid only at every burst length.  
Preliminary (April, 2000, Version 1.0)  
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AMIC Technology, Inc.  
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