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A43L8316V-10 参数 Datasheet PDF下载

A43L8316V-10图片预览
型号: A43L8316V-10
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16位×2组同步DRAM [128K X 16 Bit X 2 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1382 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L8316  
Page Read & Write Cycle at Same Bank @Burst Length=4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
High  
CS  
tRCD  
RAS  
CAS  
*Note 2  
ADDR  
Ra  
Ca0  
Cb0  
Cc0  
Cd0  
BA  
A8/AP  
Ra  
tRDL  
tCDL  
WE  
*Note 2  
*Note1  
*Note3  
DQM  
DQ  
(CL=2)  
Qa0 Qa1 Qb0  
Qb1  
Dc0  
Dc1  
Dc1  
Dd0  
Dd0  
Dd1  
Dd1  
DQ  
(CL=3)  
Qa0 Qa1 Qb0  
Dc0  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Write  
(A-Bank)  
Read  
(A-Bank)  
Read  
(A-Bank)  
Precharge  
(A-Bank)  
: Don't care  
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write  
command to avoid bus contention.  
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.  
3. DQM should mask invalid input data on precharge command cycle when asserting precharge  
before end of burst. Input data after Row precharge cycle will be masked internally.  
Preliminary (April, 2000, Version 1.0)  
26  
AMIC Technology, Inc.  
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