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A43E26161 参数 Datasheet PDF下载

A43E26161图片预览
型号: A43E26161
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行低功耗同步DRAM [1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 44 页 / 1119 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43E26161  
Page Read & Write Cycle at Same Bank @Burst Length=4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
High  
CS  
t
RCD  
RAS  
CAS  
*Note 2  
ADDR  
BS0  
Ra  
Ca  
Cb  
Cc  
Cd  
BS1  
A10/AP  
WE  
Ra  
t
RDL  
t
CDL  
*Note1  
*Note3  
DQM  
DQ  
(CL=2)  
Qb2  
Qb1  
Qa0  
Qa1  
Qb0  
Qb1  
Qb0  
Dc0  
Dc0  
Dc1  
Dc1  
Dd0  
Dd0  
Dd1  
Dd1  
DQ  
(CL=3)  
Qa0  
Qa1  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Write  
(A-Bank)  
Read  
(A-Bank)  
Read  
(A-Bank)  
Precharge  
(A-Bank)  
: Don't care  
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write  
command to avoid bus contention.  
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.  
3. DQM should mask invalid input data on precharge command cycle when asserting precharge  
before end of burst. Input data after Row precharge cycle will be masked internally.  
(December, 2004, Version 1.0)  
25  
AMIC Technology, Corp.  
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