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A43E16161V-75UF 参数 Datasheet PDF下载

A43E16161V-75UF图片预览
型号: A43E16161V-75UF
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×2组低功耗同步DRAM [1M X 16 Bit X 2 Banks Low Power Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 1315 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43E16161  
Preliminary  
1M X 16 Bit X 2 Banks Low Power Synchronous DRAM  
Features  
Low power supply  
64ms refresh period (4K cycle)  
- VDD: 1.8V VDDQ : 1.8V  
LVCMOS compatible with multiplexed address  
Self refresh with programmable refresh period through  
EMRS cycle  
Programmable Power Reduction Feature by partial  
array activation during Self-refresh through EMRS  
cycle  
Two banks / Pulse RAS  
MRS cycle with address key programs  
- CAS Latency (2 & 3)  
- Burst Length (1,2,4,8 & full page)  
- Burst Type (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the  
system clock  
Auto TCSR  
Industrial operating temperature range: -40ºC to +85ºC  
for -U series.  
Available in 54-pin TSOP(II) package  
Package is available to lead free (-F series)  
Deep Power Down Mode  
DQM for masking  
Auto & self refresh  
Clock Frequency (max) : 105MHz @ CL=3 (-95)  
133MHz @ CL=3 (-75)  
General Description  
The A43E16161 is 33,554,432 bits Low Power  
synchronous high data rate Dynamic RAM organized as 2  
X 1,048,576 words by 16 bits, fabricated with AMIC’s high  
performance CMOS technology. Synchronous design  
allows precise cycle control with the use of system clock.  
I/O transactions are possible on every clock cycle. Range  
of operating frequencies, programmable latencies allows  
the same device to be useful for a variety of high  
bandwidth,  
high  
performance  
memory  
system  
applications.  
Pin Configuration  
54 TSOP (II)  
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28  
A43E16161V  
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PRELIMINARY  
(August, 2005, Version 0.0)  
1
AMIC Technology, Corp.  
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