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A43E06161V-75UF 参数 Datasheet PDF下载

A43E06161V-75UF图片预览
型号: A43E06161V-75UF
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组同步DRAM [512K X 16 Bit X 2 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 1290 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43E06161  
Page Read & Write Cycle at Same Bank @Burst Length=4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
High  
CS  
t
RCD  
RAS  
CAS  
*Note 2  
ADDR  
BA  
Ra  
Ca0  
Cb0  
Cc0  
Cd0  
A10/AP  
Ra  
t
RDL  
t
CDL  
WE  
*Note 2  
*Note1  
*Note3  
DQM  
DQ  
(CL=2)  
Qa0  
Qa1  
Qb0  
Qa1  
Qb1  
Qb0  
Dc0  
Dc1  
Dc1  
Dd0  
Dd0  
Dd1  
Dd1  
DQ  
(CL=3)  
Qa0  
Dc0  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Write  
(A-Bank)  
Read  
(A-Bank)  
Read  
(A-Bank)  
Precharge  
(A-Bank)  
: Don't care  
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention.  
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.  
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data  
after Row precharge cycle will be masked internally.  
PRELIMINARY (July, 2005, Version 0.1)  
25  
AMIC Technology, Corp.  
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