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N04L1630C2B 参数 Datasheet PDF下载

N04L1630C2B图片预览
型号: N04L1630C2B
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM的CMOS 256K 】 16位POWER SAVER科技TM [4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 194 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N04L1630C2B
AMI Semiconductor, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1
t
CW
CE2
t
BW
LB, UB
t
AS
WE
t
DW
High-Z
Data In
t
WHZ
Data Out
High-Z
t
DH
t
WP
t
WR
Advance Information
Data Valid
t
OW
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1
(for CE2 Control, use
inverted signal)
LB, UB
t
WP
WE
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
BW
t
WR
Data Valid
High-Z
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.