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N04L1630C2B 参数 Datasheet PDF下载

N04L1630C2B图片预览
型号: N04L1630C2B
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM的CMOS 256K 】 16位POWER SAVER科技TM [4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 194 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N04L1630C2B  
AMI Semiconductor, Inc.  
Ball Grid Array Package  
Advance Information  
0.28±0.05  
1.24±0.10  
D
A1 BALL PAD  
CORNER (3)  
1. 0.35±0.05 DIA.  
E
2. SEATING PLANE - Z  
0.15  
Z
0.05  
Z
TOP VIEW  
SIDE VIEW  
1. DIMENSION IS MEASURED AT THE  
MAXIMUM SOLDER BALL DIAMETER.  
PARALLEL TO PRIMARY Z.  
A1 BALL PAD  
CORNER  
SD  
2. PRIMARY DATUM Z AND SEATING  
PLANE ARE DEFINED BY THE  
SPHERICAL CROWNS OF THE  
SOLDER BALLS.  
e
SE  
3. A1 BALL PAD CORNER I.D. TO BE  
MARKED BY INK.  
K TYP  
J TYP  
e
BOTTOM VIEW  
(DOC# 14-02-042 ReI I ECN# 01-1374  
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.