P R E L I M I N A R Y
DC Characteristics
CMOS Compatible
Paramete
r
Description
Test Conditions
Min
Typ
Max
1.0
35
Unit
µA
V
V
= V to V
,
IN
SS
CC
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
OUT
SS
CC
I
1.0
µA
LO
= V
CC
CC max
CE# = V OE#
5 MHz
1 MHz
5 MHz
1 MHz
7
2
7
2
15
4
IL,
=
V
IH,
Byte Mode
V
Active Read Current
CC
I
I
mA
mA
CC1
(Notes 1, 2)
CE# = V OE#
15
4
IL,
=
=
V
IH,
Word Mode
V
Active Write Current
CC
CE# = V OE#
V
15
30
CC2
IL,
IH
(Notes 2, 3, 5)
V
2)
Standby Current (Note
CC
I
I
I
CE#, RESET# = V
0.3 V
CC
0.2
0.2
0.2
5
5
µA
µA
µA
CC3
CC4
CC5
V
Reset Current (Note 2) RESET# = V
0.3 V
CC
SS
Automatic Sleep Mode
(Notes 2, 4)
V
V
= V
= V
0.3 V;
0.3 V
IH
IL
CC
SS
5
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
V
0.7 x V
V
+ 0.3
IH
CC
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V
= V
V
V
OL
OL
CC
CC min
V
V
= –2.0 mA, V = V
0.85 V
OH1
OH2
OH
OH
CC
CC min
CC
Output High Voltage
= –100 µA, V = V
V
–0.4
CC
CC min
CC
Low V Lock-Out Voltage
(Note 4)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I
current listed is typically less than 2 mA/MHz, with OE# at V . Typical V
is 3.0 V.
CC
CC
IH
2. Maximum ICC specifications are tested with VCC = VCCmax
.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
5. Not 100% tested.
28
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005