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AM29LV800DT-70EC 参数 Datasheet PDF下载

AM29LV800DT-70EC图片预览
型号: AM29LV800DT-70EC
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 51 页 / 1726 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
Device Bus Operations  
This section describes the requirements and use  
of the device bus operations, which are initiated  
through the internal command register. The  
command register itself does not occupy any  
addressable memory location. The register is  
composed of latches that store the commands,  
along with the address and data information  
needed to execute the command. The contents  
of the register serve as inputs to the internal  
state machine. The state machine outputs  
dictate the function of the device. Table 1 lists  
the device bus operations, the inputs and  
control levels they require, and the resulting  
output. The following subsections describe each  
of these operations in further detail.  
Table 1. Am29LV800D Device Bus Operations  
DQ8–DQ15  
BYTE#  
BYTE  
#
OE WE RESET  
Addresses  
(Note 1)  
DQ0–  
Operation  
CE#  
#
#
H
L
#
H
H
DQ7 = V  
= V  
IH  
IL  
Read  
Write  
L
L
L
A
D
D
OUT  
DQ8–DQ14 = High-  
Z, DQ15 = A-1  
IN  
OUT  
H
A
D
D
IN  
IN  
IN  
V
0.3 V  
V
CC  
0.3 V  
CC  
Standby  
X
X
X
High-Z High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z High-Z  
High-Z High-Z  
High-Z  
High-Z  
X
Sector Address,  
A6 = L, A1 = H,  
A0 = L  
Sector Protect (Note 2)  
L
H
L
V
D
X
X
X
ID  
IN  
Sector Address,  
A6 = H, A1 = H,  
A0 = L  
Sector Unprotect (Note 2)  
L
H
X
L
V
V
D
D
X
ID  
ID  
IN  
IN  
Temporary Sector Unprotect  
X
X
A
D
High-Z  
IN  
IN  
Legend:  
L = Logic Low = V , H = Logic High = V , V = 12.0 0.5 V, X = Don’t Care, A = Address In, D = Data In, D = Data Out  
IL  
IH  
ID  
IN  
IN  
OUT  
Notes:  
1. Addresses are A18:A0 in word mode (BYTE# = V ), A18:A-1 in byte mode (BYTE# = V ).  
IH  
IL  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See  
the “Sector Protection/Unprotection” section.  
BYTE# pin determines whether the device  
outputs array data in words or bytes.  
Word/Byte Configuration  
The BYTE# pin controls whether the device data  
I/O pins DQ15–DQ0 operate in the byte or word  
configuration. If the BYTE# pin is set at logic ‘1,  
the device is in word configuration, DQ15–DQ0  
are active and controlled by CE# and OE#.  
The internal state machine is set for reading  
array data upon device power-up, or after a  
hardware reset. This ensures that no spurious  
alteration of the memory content occurs during  
the power transition. No command is necessary  
in this mode to obtain array data. Standard  
microprocessor read cycles that assert valid  
addresses on the device address inputs produce  
valid data on the device data outputs. The  
device remains enabled for read access until the  
command register contents are altered.  
If the BYTE# pin is set at logic ‘0, the device is  
in byte configuration, and only data I/O pins  
DQ0–DQ7 are active and controlled by CE# and  
OE#. The data I/O pins DQ8–DQ14 are  
tri-stated, and the DQ15 pin is used as an input  
for the LSB (A-1) address function.  
Requirements for Reading Array Data  
See “Reading Array Data” for more information.  
Refer to the AC Read Operations table for timing  
specifications and to Figure 1 for the timing dia-  
gram. ICC1 in the DC Characteristics table repre-  
sents the active current specification for reading  
array data.  
To read array data from the outputs, the system  
must drive the CE# and OE# pins to VIL. CE# is  
the power control and selects the device. OE# is  
the output control and gates array data to the  
output pins. WE# should remain at VIH. The  
10  
Am29LV800D  
Am29LV800D_00_A4_E January 21, 2005  
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