DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
= V to V
Min
Typ
Max
± 1.0
35
Unit
µA
V
V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
CC
OUT
SS
I
± 1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
9
2
16
4
V
Active Read Current
CC
I
CE# = V OE#
V
V
mA
mA
CC1
IL,
=
=
IH
(Notes 1, 2)
V
Active Write Current
CC
I
CE# = V OE#
15
30
CC2
IL,
IH
(Notes 2, 3, 5)
I
I
V
V
Standby Current (Note 2)
CE#, RESET# = V ± 0.3 V
0.2
0.2
5
5
µA
µA
CC3
CC
CC
CC
Reset Current (Note 2)
RESET# = V ± ±0.3 V
CC4
SS
Automatic Sleep Mode
(Notes 2, 4)
I
V
= V ± 0.3 V; V = V ± ±0.3 V
0.2
5
µA
CC5
IH
CC
IL
SS
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
0.7 x V
V
+ 0.3
IH
CC
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
V
V
OL
OL
OH
OH
CC
CC min
V
= –2.0 mA, V = V
0.85 V
CC
OH1
OH2
CC
CC min
CC min
Output High Voltage
V
= –100 µA, V = V
V
–0.4
CC
CC
Low V Lock-Out Voltage
(Note 5)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I current listed is typically is less than 2 mA/MHz, with OE# at V . Typical specifications are for V = 3.0 V.
CC
IH
CC
2. Maximum I specifications are tested with V = V max.
CC
CC
CC
3. I active while Embedded Erase or Embedded Program is in progress.
CC
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
current is 200 nA.
+ 30 ns. Typical sleep mode
ACC
5. Not 100% tested.
Am29LV017D
31
AMD [ AMD ]
