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A160CB12VF 参数 Datasheet PDF下载

A160CB12VF图片预览
型号: A160CB12VF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 1.8伏只超低电压闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1031 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
REVISION SUMMARY  
Revision A (December 1998)  
Revision A+5 (July 23, 1999)  
Initial release.  
Global  
Added 90 ns speed option.  
Revision A+1 (January 1999)  
Revision A+6 (September 1, 1999)  
Distinctive Characteristics  
WP#/ACC pin: In the third subbullet, deleted reference  
AC Characteristics  
to increased erase performance.  
Hardware Reset (RESET#) table: Deleted tRPD specifi-  
cation. Erase/Program Operations table: Deleted tOES  
specification.  
Device Bus Operations  
Accelerated Program and Erase Operations: Deleted  
all references to accelerated erase.  
Revision A+7 (September 7, 1999)  
Sector/Sector Block Protection and Unprotection:  
Changed section name and text to include tables and  
references to sector block protection and unprotection.  
Distinctive Characteristics  
Ultra low power consumption bullet: Corrected values  
to match those in the DC Characteristics table.  
AC Characteristics  
AC Characteristics  
Accelerated Program Timing Diagram: Deleted refer-  
ence in title to accelerated erase.  
Alternate CE# Controlled Erase/Program Operations:  
Deleted tOES specification.  
Revision A+2 (March 23, 1999)  
Connection Diagrams  
Revision B (December 14, 1999)  
AC Characteristics—Figure 17. Program  
Operations Timing and Figure 18. Chip/Sector  
Erase Operations  
Corrected the TSOP pinout on pins 13 and 14.  
Revision A+3 (April 12, 1999)  
Global  
Deleted tGHWL and changed OE# waveform to start at  
high.  
Modified the description of accelerated programming to  
emphasize that it is intended only to speed in-system  
programming of the device during the system produc-  
tion process.  
Physical Dimensions  
Replaced figures with more detailed illustrations.  
Revision C (February 21, 2000)  
Distinctive Characteristics  
Removed “Advance Information” designation from data  
sheet. Data sheet parameters are now stable; only  
speed, package, and temperature range combinations  
are expected to change in future revisions.  
Secured Silicon (SecSi) Sector bullet: Added the 8-byte  
unique serial number to description.  
Device Bus Operations table  
Modified Note 3 to indicate sector protection behavior  
when VIH is asserted on WP#/ACC. Applied Note 3 to  
the WP#/ACC column for write operations.  
Device Bus Operations table  
Changed standby voltage specification to VCC 0.2 V.  
Standby Mode  
Ordering Information  
Changed standby voltage specification to VCC 0.2 V.  
Added the “N” designator to the optional processing  
section.  
DC Characteristics table  
Changed test conditions for ICC3, ICC4, ICC5 to VCC 0.2  
V.  
Secured Silicon (SecSi) Sector Flash Memory  
Region  
Modified explanatory text to indicate that devices now  
have an 8-byte unique ESN in addition to the 16-byte  
random ESN. Added table for address range  
clarification.  
Revision C+1 (November 14, 2000)  
Global  
Added dash to speed options and OPNs. Added table  
of contents.  
Revision A+4 (May 14, 1999)  
Global  
AC Characteristics—Read Operations  
Changed tDF to 16 ns for all speeds.  
Deleted all references to the unique ESN.  
January 23, 2007 21635C5  
Am29SL160C  
49  
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