D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
VIN = VSS to VCC
Min
Typ
Max
±1.0
35
Unit
µA
,
ILI
Input Load Current
VCC = VCC max
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 11.0 V
µA
VOUT = VSS to VCC
,
±1.0
µA
VCC = VCC max
5 MHz
1 MHz
5 MHz
1 MHz
5
1
5
1
10
3
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
10
3
CE# = VIL, OE# = VIH,
Word Mode
VCC Active Write Current
(Notes 2, 3, 5)
ICC2
CE# = VIL, OE# = VIH
20
30
mA
ICC3
ICC4
VCC Standby Current (Note 2)
VCC Reset Current (Note 2)
CE#, RESET# = VCC±0.2 V
RESET# = VSS ± 0.2 V
1
1
5
5
µA
µA
Automatic Sleep Mode
(Notes 2, 3)
VIH = VCC ± 0.2 V;
VIL = VSS ± 0.2 V
ICC5
1
5
µA
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.2 x VCC
VCC + 0.3
V
V
0.8 x VCC
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
VHH
8.5
9.0
9.5
V
V
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 2.0 V
11.0
0.1
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 100 μA, VCC = VCC min
IOH = –100 μA, VCC = VCC min
VCC–0.1
1.2
Low VCC Lock-Out Voltage
(Note 4)
VLKO
1.5
V
Notes:
1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIL. Typical VCC is 2.0 V.
2. The maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + ꢀ0 ns.
ꢀ. Not 100% tested.
32
Am29SL160C
21635C5 January 23, 2007
AMD [ AMD ]
