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A160CB12VF 参数 Datasheet PDF下载

A160CB12VF图片预览
型号: A160CB12VF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 1.8伏只超低电压闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1031 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
device did not completed the operation successfully,  
to and following each subsequent sector erase com-  
mand. If DQ3 is high on the second status check, the  
last command might not have been accepted. Table 13,  
on page 30 shows the outputs for DQ3.  
and the system must write the reset command to return  
to reading array data.  
The remaining scenario is that the system initially  
determines that the toggle bit is toggling and DQ5 is not  
high. The system may continue to monitor the toggle bit  
and DQ5 through successive read cycles, determining  
the status as described in the previous paragraph.  
Alternatively, it may choose to perform other system  
tasks. In this case, the system must start at the begin-  
ning of the algorithm when it returns to determine the  
status of the operation (top of Figure 6).  
START  
Read DQ7–DQ0  
(Note 1)  
DQ5: Exceeded Timing Limits  
DQ5 indicates whether the program or erase time  
exceeded a specified internal pulse count limit. Under  
these conditions DQ5 produces a “1.This is a failure  
condition that indicates the program or erase cycle was  
not successfully completed.  
Read DQ7–DQ0  
The DQ5 failure condition may appear if the system  
tries to program a “1” to a location that is previously pro-  
grammed to “0.Only an erase operation can change  
a “0” back to a “1.Under this condition, the device  
halts the operation, and when the operation exceeds  
the timing limits, DQ5 produces a “1.”  
No  
Toggle Bit  
= Toggle?  
Yes  
No  
DQ5 = 1?  
Yes  
Under both these conditions, the system must issue the  
reset command to return the device to reading array  
data.  
DQ3: Sector Erase Timer  
(Notes  
1, 2)  
Read DQ7–DQ0  
Twice  
After writing a sector erase command sequence, the  
system may read DQ3 to determine whether or not an  
erase operation began. (The sector erase timer does  
not apply to the chip erase command.) If additional  
sectors are selected for erasure, the entire time-out  
also applies after each additional sector erase com-  
mand. When the time-out is complete, DQ3 switches  
from “0” to “1.If the time between additional sector  
erase commands from the system are assumed to be  
less than 50 μs, the system need not monitor DQ3. See  
also the “Sector Erase Command Sequence” on  
page 24.  
Toggle Bit  
= Toggle?  
No  
Yes  
Program/Erase  
Operation Not  
Complete, Write  
Reset Command  
Program/Erase  
Operation Complete  
After the sector erase command sequence is written,  
the system should read the status on DQ7 (Data#  
Polling) or DQ6 (Toggle Bit I) to ensure the device  
accepted the command sequence, and then read DQ3.  
If DQ3 is “1”, the internally controlled erase cycle  
started; all further commands (other than Erase Sus-  
pend) are ignored until the erase operation is complete.  
If DQ3 is “0”, the device accepts additional sector erase  
commands. To ensure the command is accepted, the  
system software should check the status of DQ3 prior  
Notes:  
1. Read toggle bit twice to determine whether or not it is  
toggling. See text.  
2. Recheck toggle bit because it may stop toggling as DQꢀ  
changes to “1”. See text.  
Figure 6. Toggle Bit Algorithm  
January 23, 2007 21635C5  
Am29SL160C  
29  
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