Chapter 5: DC and Switching Characteristics
5–3
Operating Conditions
Programming/Erasure Specifications
Table 5–3 shows the MAX II device family programming/erasure specifications.
Table 5–3. MAX II Device Programming/Erasure Specifications
Parameter
Erase and reprogram cycles
Note to Table 5–3:
Minimum
Typical
Maximum
Unit
—
—
100 (1)
Cycles
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.
DC Electrical Characteristics
Table 5–4 shows the MAX II device family DC electrical characteristics.
Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum Typical Maximum
Unit
II
Input pin leakage
current
VI = VCCIOmax to 0 V (2)
–10
—
10
µA
IOZ
Tri-stated I/O pin
leakage current
VO = VCCIOmax to 0 V (2)
–10
—
10
µA
ICCSTANDBY
VCCINT supply current
(standby) (3)
MAX II devices
MAX IIG devices
EPM240Z
—
—
—
—
—
—
—
—
12
2
—
—
mA
mA
µA
29
32
400
190
55
40
150
210
—
EPM570Z
µA
VSCHMITT (4)
Hysteresis for Schmitt VCCIO = 3.3 V
trigger input (5)
mV
mV
mA
mA
V
CCIO = 2.5 V
—
ICCPOWERUP
VCCINT supply current
during power-up (6)
MAX II devices
—
MAX IIG and MAX IIZ
devices
—
RPULLUP
Value of I/O pin pull-up VCCIO = 3.3 V (7)
5
—
—
—
—
25
40
60
95
kΩ
kΩ
kΩ
kΩ
resistor during user
V
V
V
CCIO = 2.5 V (7)
CCIO = 1.8 V (7)
CCIO = 1.5 V (7)
10
25
45
mode and in-system
programming
© Novermber 2008 Altera Corporation
MAX II Device Handbook
ALTERA [ ALTERA CORPORATION ]
