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EPCS4SI8N 参数 Datasheet PDF下载

EPCS4SI8N图片预览
型号: EPCS4SI8N
PDF下载: 下载PDF文件 查看货源
内容描述: 串行配置器件 [Serial Configuration Devices]
分类和应用: 存储内存集成电路光电二极管过程控制系统PCSLTE可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 38 页 / 686 K
品牌: ALTERA [ ALTERA CORPORATION ]
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3–32
    
Chapter 3: Serial Configuration Devices (EPCS1, EPCS4, EPCS16, EPCS64, and EPCS128) Data Sheet
Operating Conditions
Table 3–20.
DC Operating Conditions
Symbol
V
IH
Parameter
High-level input voltage for EPCS1,
EPCS4, and EPCS16
High-level input voltage for EPCS64
and EPCS128
V
IL
V
OH
V
OL
I
I
I
OZ
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Tri-state output off-state current
I
OL
= 1.6 mA
V
I
= V
CC
or GND
V
O
= V
CC
or GND
Conditions
I
OH
= –100
A
Min
0.6 x V
CC
0.6 x V
CC
–0.5
V
CC
– 0.2
–10
–10
Max
V
CC
+ 0.4
V
CC
+ 0.2
0.3 x V
CC
0.4
10
10
Unit
V
V
V
V
V
A
A
Table 3–21.
I
CC
Supply Current
Symbol
I
CC0
Parameter
V
CC
supply current (standby)
for EPCS1, EPCS4, and EPCS16
V
CC
supply current (standby)
for EPCS64 and EPCS128
I
CC1
V
CC
supply current (during active power mode) for
EPCS1, EPCS4, and EPCS16
V
CC
supply current (during active power mode) for
EPCS64 and EPCS128
Table 3–22.
Capacitance
Symbol
C
IN
C
OUT
Parameter
Input pin capacitance
Output pin capacitance
V
IN
= 0 V
V
OUT
= 0 V
Conditions
Min
Max
6
8
Unit
pF
pF
5
5
15
20
mA
mA
100
A
Conditions
Min
Max
50
Unit
A
Notes to
through
(1) For more information, refer to the
(2) Maximum V
CC
rise time is 100 ms.
(3) The I
OH
parameter refers to high-level TTL or CMOS output current; the I
OL
parameter refers to low-level TTL or CMOS output current.
(4) Capacitance is sample-tested only at T
A
= 25 ×C and at a 20-MHz frequency.