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EP1SGX40GF1020I6 参数 Datasheet PDF下载

EP1SGX40GF1020I6图片预览
型号: EP1SGX40GF1020I6
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 4697 CLBs, 41250-Cell, CMOS, PBGA1020, 33 X 33 MM, 1 MM PITCH, FBGA-1020]
分类和应用: 可编程逻辑
文件页数/大小: 272 页 / 1348 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
RAM block and 4,608 bits for the M4K RAM block. The total number of  
shift register outputs (number of taps n × width w) must be less than the  
maximum data width of the RAM block (18 for M512 blocks, 36 for M4K  
blocks). To create larger shift registers, the memory blocks are cascaded  
together.  
Data is written into each address location at the falling edge of the clock  
and read from the address at the rising edge of the clock. The shift register  
mode logic automatically controls the positive and negative edge  
clocking to shift the data in one clock cycle. Figure 4–13 shows the  
TriMatrix memory block in the shift register mode.  
Figure 4–13. Shift Register Memory Configuration  
w × m × n Shift Register  
m-Bit Shift Register  
w
w
w
m-Bit Shift Register  
w
n Number  
of Taps  
m-Bit Shift Register  
w
w
w
m-Bit Shift Register  
w
Memory Block Size  
TriMatrix memory provides three different memory sizes for efficient  
application support. The large number of M512 blocks are ideal for  
designs with many shallow first-in first-out (FIFO) buffers. M4K blocks  
provide additional resources for channelized functions that do not  
require large amounts of storage. The M-RAM blocks provide a large  
4–22  
Stratix GX Device Handbook, Volume 1  
Altera Corporation  
February 2005  
 
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