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EP1SGX40GF1020I6 参数 Datasheet PDF下载

EP1SGX40GF1020I6图片预览
型号: EP1SGX40GF1020I6
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 4697 CLBs, 41250-Cell, CMOS, PBGA1020, 33 X 33 MM, 1 MM PITCH, FBGA-1020]
分类和应用: 可编程逻辑
文件页数/大小: 272 页 / 1348 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
When the M512 RAM block is configured as a shift register block, a shift  
register of size up to 576 bits is possible.  
The M512 RAM block can also be configured to support serializer and  
deserializer applications. By using the mixed-width support in  
combination with DDR I/O standards, the block can function as a  
SERDES to support low-speed serial I/O standards using global or  
regional clocks. See “I/O Structure” on page 4–96 for details on dedicated  
SERDES in Stratix GX devices.  
M512 RAM blocks can have different clocks on its inputs and outputs.  
The wren, datain, and write address registers are all clocked together  
from one of the two clocks feeding the block. The read address, rden, and  
output registers can be clocked by either of the two clocks driving the  
block. This allows the RAM block to operate in read/write or  
input/output clock modes. Only the output register can be bypassed. The  
eight labclksignals or local interconnect can drive the inclock,  
outclock, wren, rden, inclr, and outclrsignals. Because of the  
advanced interconnect between the LAB and M512 RAM blocks, LEs can  
also control the wrenand rdensignals and the RAM clock, clock enable,  
and asynchronous clear signals. Figure 4–14 shows the M512 RAM block  
control signal generation logic.  
The RAM blocks within Stratix GX devices have local interconnects to  
allow LEs and interconnects to drive into RAM blocks. The M512 RAM  
block local interconnect is driven by the R4, R8, C4, C8, and direct link  
interconnects from adjacent LABs. The M512 RAM blocks can  
communicate with LABs on either the left or right side through these row  
interconnects or with LAB columns on the left or right side with the  
column interconnects. Up to 10 direct link input connections to the M512  
RAM block are possible from the left adjacent LABs and another  
10 possible from the right adjacent LAB. M512 RAM outputs can also  
connect to left and right LABs through 10 direct link interconnects. The  
M512 RAM block has equal opportunity for access and performance to  
and from LABs on either its left or right side. Figure 4–15 shows the M512  
RAM block to logic array interface.  
4–24  
Stratix GX Device Handbook, Volume 1  
Altera Corporation  
February 2005  
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