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AS7C4096A-10TIN 参数 Datasheet PDF下载

AS7C4096A-10TIN图片预览
型号: AS7C4096A-10TIN
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0V 512K ×8 CMOS SRAM [5.0V 512K x 8 CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C4096A  
®
Write waveform 2 (CE controlled)9  
tWC  
tWR  
tAH  
tAW  
Address  
tAS  
tCW  
CE  
tWP  
WE  
DIN  
tDW  
Data valid  
tDH  
AC test conditions  
- Output load: see Figure B.  
- Input pulse level: GND to V - 0.5V. See Figures A and B.  
CC  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
+5.0V  
Thevenin equivalent:  
168  
480  
V
- 0.5V  
GND  
DOUT  
255  
CC  
90%  
10%  
90%  
10%  
+1.728V  
DOUT  
C10  
2 ns  
Figure A: Input pulse  
GND  
Figure B: 5.0V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
For test conditions, see AC Test Conditions.  
tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CE and OE are LOW for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
All write cycle timings are referenced from the last valid address to the first transitioning address.  
10 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 6 of 10