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AS7C4096A-10TIN 参数 Datasheet PDF下载

AS7C4096A-10TIN图片预览
型号: AS7C4096A-10TIN
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0V 512K ×8 CMOS SRAM [5.0V 512K x 8 CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C4096A  
®
Write cycle (over the operating range)9  
–10  
–12  
–15  
–20  
Parameter  
Write cycle time  
Symbol Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max Unit Notes  
t
t
t
10  
7
12  
15  
20  
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CW  
AW  
5
8
8
6
10  
10  
0
7
12  
12  
0
Chip enable (CE) to write end  
Address setup to write end  
Address setup time  
7
t
0
0
AS  
t
t
7
8
10  
15  
0
12  
20  
0
Write pulse width (OE = high)  
Write pulse width (OE = low  
Address hold from end of write  
Write recovery time  
WP1  
WP2  
10  
0
12  
0
t
t
AH  
0
0
0
0
WR  
DW  
t
5
6
7
9
Data valid to write end  
t
0
0
0
0
3,4  
3,4  
3,4  
Data hold time  
DH  
t
t
2
2
2
2
Write enable to output in high Z  
Output active from write end  
WZ  
3
3
3
3
OW  
Write waveform 1 (WE controlled)9  
tWC  
tWR  
tAH  
tAW  
Address  
tWP  
WE  
tAS  
tDW  
Data valid  
tDH  
DIN  
tWZ  
tOW  
DOUT  
5/27/05, v. 1.1  
Alliance Semiconductor  
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