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AS7C3513B-15TCN 参数 Datasheet PDF下载

AS7C3513B-15TCN图片预览
型号: AS7C3513B-15TCN
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 32K ×16的CMOS SRAM [3.3V 32K x 16 CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 218 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C3513B  
®
Read waveform 2 (CE, OE, UB, LB controlled)3,6,8,9  
tRC  
Address  
tAA  
OE  
tOE  
tOH  
tOLZ  
CE  
tOHZ  
tHZ  
tACE  
tLZ  
LB, UB  
tBA  
tBHZ  
tBLZ  
Data OUT  
Data valid  
Write cycle (over the operating range)11  
-10  
-12  
-15  
-20  
Parameter  
Write cycle time  
Symbol  
Min Max Min Max Min Max  
Min  
20  
12  
12  
0
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
t
t
t
10  
8
12  
9
15  
10  
10  
0
WC  
CW  
AW  
Chip enable (CE) to write end  
Address setup to write end  
Address setup time  
8
9
t
0
0
AS  
WP  
WR  
Write pulse width  
t
7
8
9
12  
0
Write recovery time  
t
0
0
0
Address hold from end of write  
Data valid to write end  
Data hold time  
t
0
0
0
0
AH  
t
5
6
8
10  
0
DW  
t
0
0
0
5
DH  
WZ  
OW  
Write enable to output in high  
Z
t
5
6
7
8
ns  
4 , 5  
4 , 5  
Output active from write end  
Byte select low to end of write  
t
1
7
1
8
1
9
2
9
ns  
ns  
t
BW  
3/24/04, v.1.2  
Alliance Semiconductor  
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