AS6YB51216
&
ꢈꢀꢁꢊ
Data retention characteristics (over the operating range)
Parameter
VCC for data retention
Symbol
VDR
Test conditions
Min
1.0V
–
Max
2.2
8
Unit
V
VCC = 1.0V
Chip select controlledA B
Data retention current
ICCDR
tCDR
µA
ns
or LB / UB controlledC
VIN ≥ VCC – 0.2V or
VIN ≤ 0.2V
Chip deselect to data retention time
0
–
Operation recovery time
tR
tRC
–
ns
ꢁꢂ
ꢃꢂꢄꢂCS2 controlled: CS2ꢂ≤ 0.2V
ꢅꢂ
LB / UB controlled: LB = UBꢂ≥ꢂꢆꢇꢇꢂꢈꢂꢉꢊꢋꢆꢌꢂꢅꢍꢋꢂ≥ꢂꢆꢇꢇꢂꢈꢂꢉꢊꢋꢆ
: CS1 controlled: CS1ꢂ≥ꢂVcc-0.2V; CS2ꢂ≤ꢂ0.2V
:
Data retention waveform
CS1 controlled
t
t
R
CDR
Data retention mode
V
CC
1.65V
1.4V
V
DR
CS1,
LB/UB
GND
CS1≥VCC -0.2, LB=UB ≥VCC -0.2V
CS2 controlled
Data retention mode
V
CC
1.65V
CS2
t
t
CDR
R
V
DR
CS2≤0.2V
0.4V
GND
11/1/01; V.0.9.8
Alliance Semiconductor
P. 8 of 11
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
