AS6YB51216
&
ꢅꢆ
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)
a
CC
Parameter
Input capacitance
I/O capacitance
Symbol
CIN
Signals
A, CS1, CS2, WE, OE, LB, UB
I/O
Test conditions
Max
5
Unit
pF
VIN = 0V
CI/O
VIN = VOUT = 0V
7
pF
ꢀꢁꢄ
Read cycle (over the operating range)
–70/85
Parameter
Read cycle time
Symbol
tRC
tAA
tACS
tOE
Min
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
70/85
–
70/85
70/85
35/40
–
Address access time
–
–
3
3
Chip select to output access time
Output enable (OE) access time
Output hold from address change
Chip select ꢀo low Z output
Chip disable to high Z output
OE low to low Z output
UB/LB access time
–
tOH
tCLZ
tCHZ
tOLZ
tBA
10
10
–
5
–
4, 5
4, 5
4, 5
20
5
–
–
70/85
–
UB/LB low to low Z
tBLZ
tBHZ
tOHZ
tPU
10
–
4, 5
4, 5
4, 5
4, 5
4, 5
UB/LB high to high Z
20
OE high to output in high Z
Power up time
–
20
0
–
Power down time
tPD
–
55
Key to switching waveforms
Rising input
Falling input
Undefined/don’t care
ꢀꢁꢂꢁꢃꢁꢄ
Read waveform 1 (address controlled)
t
RC
Address
t
AA
t
t
OH
OH
D
Previous data valid
Data valid
OUT
11/1/01; V.0.9.8
Alliance Semiconductor
P. 4 of 11