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AS6YB51216-85BI 参数 Datasheet PDF下载

AS6YB51216-85BI图片预览
型号: AS6YB51216-85BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, 7 X 9 MM, CSP, FBGA-48]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 161 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS6YB51216  
&
ꢅꢆ  
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)  
a
CC  
Parameter  
Input capacitance  
I/O capacitance  
Symbol  
CIN  
Signals  
A, CS1, CS2, WE, OE, LB, UB  
I/O  
Test conditions  
Max  
5
Unit  
pF  
VIN = 0V  
CI/O  
VIN = VOUT = 0V  
7
pF  
ꢀꢁꢄ  
Read cycle (over the operating range)  
–70/85  
Parameter  
Read cycle time  
Symbol  
tRC  
tAA  
tACS  
tOE  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
70/85  
70/85  
70/85  
35/40  
Address access time  
3
3
Chip select to output access time  
Output enable (OE) access time  
Output hold from address change  
Chip select o low Z output  
Chip disable to high Z output  
OE low to low Z output  
UB/LB access time  
tOH  
tCLZ  
tCHZ  
tOLZ  
tBA  
10  
10  
5
4, 5  
4, 5  
4, 5  
20  
5
70/85  
UB/LB low to low Z  
tBLZ  
tBHZ  
tOHZ  
tPU  
10  
4, 5  
4, 5  
4, 5  
4, 5  
4, 5  
UB/LB high to high Z  
20  
OE high to output in high Z  
Power up time  
20  
0
Power down time  
tPD  
55  
Key to switching waveforms  
Rising input  
Falling input  
Undefined/don’t care  
ꢀꢁꢂꢁꢃꢁꢄ  
Read waveform 1 (address controlled)  
t
RC  
Address  
t
AA  
t
t
OH  
OH  
D
Previous data valid  
Data valid  
OUT  
11/1/01; V.0.9.8  
Alliance Semiconductor  
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