AS4C8M16D1
Table 11. Absolute Maximum Rating
Rating
-5
Symbol
Item
Unit
Note
VIN, VOUT
VIN
I/O Pins Voltage
VREF and Inputs Voltage
Power Supply Voltage
- 0.5~VDDQ + 0.5
- 1~3.6
V
V
V
1,2
1,2
1,2
1
VDD, VDDQ
- 1~3.6
Commercial
Industrial
0~70
C
°
C
°
C
°
TA
Ambient Temperature
-40~85
- 55~150
1
1
1
1
1
TSTG
PD
Storage Temperature
Power Dissipation
Short Circuit Output Current
W
IOS
50
mA
Note1: Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of
the devices
Note2: These voltages are relative to Vss
Table 12. Recommended D.C. Operating Conditions
(TA = -40 ~ 85 C)
Parameter
Power Supply Voltage
Symbol
VDD
Min.
Max.
Unit
V
Note
1,2
2.375
2.375
2.625
2.625
Power Supply Voltage (for I/O Buffer)
Input Reference Voltage
Termination Voltage
VDDQ
V
1,2
VREF
0.49* VDDQ
0.51* VDDQ
V
VTT
V
- 0.04
+ 0.15
V
+ 0.04
REF
V
REF
Input High Voltage (DC)
Input Low Voltage (DC)
VIH (DC)
VIL (DC)
VIN (DC)
V
V
+ 0.3
- 0.15
+ 0.3
V
REF
DDQ
-0.3
V
V
REF
-0.3
V
V
1,2
DDQ
Input Voltage Level, CK and
inputs
CK
Input Leakage current
Output Leakage current
Output High Voltage
Output Low Voltage
II
-5
-5
5
A
A
V
IOZ
5
-
VOH
VOL
VTT + 0.76
-
IOH = -15.2 mA
IOL = +15.2mA
VTT - 0.76
V
Table 13. Capacitance
(VDD = 2.5V±5%, f = 1MHz, TA = 25 C)
Symbol
Parameter
Input Capacitance (CK,
Min.
Max.
Unit
CIN1
)
2
4
pF
CK
CIN2
CI/O
Input Capacitance (All other input-only pins)
DQ, DQS, DM Input/Output Capacitance
2
4
4
6
pF
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
Alliance Memory Inc. Confidential
10
Rev. 1.1
Feb. /2009