AS4C16M16SA
Table 15. D.C. Characteristics
(VDD = 3.3V 0.3V, TA = -40~85°C)
- 6
60
25
-7
Symbol
Unit Note
Description/Test condition
Operating Current
tRC tRC(min), Outputs Open
One bank active
Precharge Standby Current in non-power down mode
tCK = 15ns, CS# VIH(min), CKE VIH
Input signals are changed every 2clks
Precharge Standby Current in non-power down mode
tCK = , CLK VIL(max), CKE VIH
Precharge Standby Current in power down mode
tCK = 15ns, CKE VIL(max)
Max.
55
20
IDD1
3
IDD2N
18
2
18
2
IDD2NS
IDD2P
Precharge Standby Current in power down mode
tCK = , CKE VIL(max)
2
2
IDD2PS
mA
Active Standby Current in non-power down mode
tCK = 15ns, CKE VIH(min), CS# VIH(min)
Input signals are changed every 2clks
Active Standby Current in non-power down mode
CKE VIH(min), CLK VIL(max), tCK =
Operating Current (Burst mode)
35
30
IDD3N
35
62
75
30
60
70
IDD3NS
IDD4
3, 4
3
tCK =tCK(min), Outputs Open, Multi-bank interleave
Refresh Current
IDD5
tRC tRC(min)
Self Refresh Current
CKE 0.2V ; for other inputs VIH VDD - 0.2V, VIL 0.2V
2
2
IDD6
≧
Confidential
18
Rev. 2.0 63nm Mar /2014
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
