AS29CF160T-55TIN
AS29CF160B-55TIN
Timing Waveforms for Alternate
Controlled Write Operation
CE
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data Polling
PA
Addresses
t
WC
tAS
tAH
tWH
WE
OE
t
WHWH1 or 2
t
CP
t
BUSY
t
CPH
CE
t
WS
tDS
t
DH
Data
I/O7
DOUT
t
RH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET
RY/BY
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O 7 = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Erase and Programming Performance
Parameter
Sector Erase Time
Typ. (Note 1)
Max. (Note 2)
Unit
sec
sec
µs
Comments
0.3
8
1.5
32
Excludes 00h programming
prior to erasure
Chip Erase Time
Byte Programming Time
Word Programming Time
6
100
180
16
11
8
Excludes system-level
overhead (Note 5)
µs
Chip Programming Time
(Note 3)
Byte Mode
Word Mode
sec
sec
3
12
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
Confidential
- 36 of 41 -
Rev.1.0 July 2019
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
