AS29CF160T-55TIN
AS29CF160B-55TIN
AC Characteristics
Erase and Program Operations
Alternate
Controlled Writes
CE
Parameter
Description
Speed
Unit
JEDEC
Std
-55
55
0
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tWC
tAS
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min.
Min.
Min.
Min.
Min.
Min.
Min.
ns
ns
ns
ns
ns
ns
ns
tAH
40
30
0
tDS
tDH
Data Hold Time
tOES
tGHEL
Output Enable Setup Time
0
tGHEL
0
Read Recover Time Before Write (
High to
Low)
WE
OE
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
Min.
Min.
Min.
0
0
ns
ns
ns
Setup Time
Hold Time
WE
WE
CE
CE
35
Pulse Width
Pulse Width High
tCPH
Min.
20
ns
Byte
Typ.
Typ.
Typ.
6
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
µs
Word
11
0.3
sec
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
Confidential
- 35 of 41 -
Rev.1.0 July 2019
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
