AS29CF160T-55TIN
AS29CF160B-55TIN
AC Characteristics
Erase and Program Operations
Parameter
Description
Speed
Unit
JEDEC
Std
-55
55
0
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tWC
tAS
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min.
Min.
Min.
Min.
Min.
Min.
ns
ns
ns
ns
ns
ns
tAH
tDS
40
30
0
tDH
tOES
Data Hold Time
Output Enable Setup Time
0
tGHWL
tELWL
tGHWL
tCS
Min.
Min.
0
0
ns
ns
Read Recover Time Before Write (
high to
low)
WE
OE
Setup Time
Hold Time
CE
CE
tWHEH
tCH
Min.
0
ns
tWLWH
tWHWL
tWP
Write Pulse Width
Min.
Min.
Typ.
Typ.
Typ.
Min.
Min
35
20
6
ns
ns
tWPH
Write Pulse Width High
Byte
tWHWH1
tWHWH2
tWHWH1
Byte Programming Operation (Note 2)
µs
Word
11
0.3
50
0
tWHWH2
tvcs
Sector Erase Operation (Note 2)
VCC Set Up Time (Note 1)
sec
µs
tRB
ns
Recovery Time from RY/
BY
tBUSY
Min
30
ns
Program/Erase Valid to RY/
Delay
BY
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
Confidential
- 29 of 41 -
Rev.1.0 July 2019
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
